Product Description

The Infineon BSM50GD120DN2E3226 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for demanding industrial applications such as motor drives, renewable energy systems, and uninterruptible power supplies (UPS). Housed in the compact EconoPACK 2 package, this module offers a 1200V collector-emitter voltage rating and a continuous collector current of 50A at 80°C, with a peak pulsed current capability of up to 100A. It features low saturation voltage (VCE(sat)) and low gate-emitter leakage current, ensuring efficient switching and minimal power losses. The module is optimized for high-frequency operation, providing reliable performance in high-stress environments

Technical Specifications

• Type: IGBT Module
• Manufacturer: Infineon Technologies
• Package: EconoPACK 2
• Configuration: Three-phase inverter
• Collector-Emitter Voltage (VCE): 1200V
• Collector-Emitter Saturation Voltage (VCE(sat)): 2.5V
• Continuous Collector Current (IC) at 80°C: 50A
• Pulsed Collector Current (ICpulsed): 100A (1ms pulse)
• Power Dissipation (Ptot): 350W
• Gate-Emitter Voltage (VGE): ±20V
• Input Capacitance (Cies): 3.3nF at 25V
• Operating Junction Temperature (TJ): Up to 150°C
• Mounting Type: Chassis mount
• Package Dimensions (L × W × H): 107.5mm × 45.5mm × 17mm
• Weight: Approximately 186g
• Thermal Resistance (junction-to-case): 0.5 K/W
• Thermal Resistance (junction-to-ambient): 1.0 K/W