Product Description

The Infineon FZ600R17KE3 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for demanding industrial applications. With a 1700 V collector-emitter voltage and a continuous collector current of 600 A at 80°C, it offers exceptional power handling capabilities. Utilizing Infineon's TRENCHSTOP™ IGBT 3 technology and Emitter Controlled 3 diode, the module ensures low switching losses and high efficiency. Its robust design features a package with a Comparative Tracking Index (CTI) greater than 400, high creepage and clearance distances, and an isolated base plate, making it suitable for applications such as motor drives, wind energy systems, and uninterruptible power supplies (UPS).​

Technical Specifications

• Collector-Emitter Voltage (V_CE max): 1700 V
• Continuous Collector Current (I_C): 600 A at 80°C
• Repetitive Peak Collector Current (I_CRM): 1200 A
• Collector-Emitter Saturation Voltage (V_CE(sat)): 2.45 V
• Gate-Emitter Leakage Current (I_GE max): 400 nA
• Power Dissipation (P_D): 3150 W
• Operating Temperature Range (T_{j op}): -40°C to +125°C
• Package Type: 62 mm standard housing
• Mounting Type: Chassis mount
• Gate-Emitter Voltage (V_GE): ±20 V
• Thermal Resistance (junction to case): 0.065 K/W
• Thermal Resistance (case to heatsink): 0.026 K/W
• Weight: 340 g
• Application Areas: Motor control, wind energy systems, uninterruptible power supplies (UPS), and other high-power industrial applications.