Product Description

The Infineon BSM300GB60DLC is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for demanding industrial applications such as motor drives, renewable energy systems, and uninterruptible power supplies (UPS). Housed in a 62mm C-series package, this dual IGBT module offers a 600V collector-emitter voltage rating and a continuous collector current of 300A at 25°C, with a peak pulsed current capability of up to 600A. It features low saturation voltage (VCE(sat)) and low gate-emitter leakage current, ensuring efficient switching and minimal power losses. The module is optimized for high-frequency operation, providing reliable performance in high-stress environments.

Technical Specifications

• Type: IGBT Module
• Manufacturer: Infineon Technologies
• Package: 62mm C-series
• Configuration: Dual
• Collector-Emitter Voltage (V_CEO): 600V
• Collector-Emitter Saturation Voltage (V_CESAT): 1.95V
• Continuous Collector Current (I_C) at 25°C: 375A
• Pulsed Collector Current (I_CP): 600A (1ms pulse)
• Power Dissipation (P_D): 1.25kW
• Gate-Emitter Leakage Current (I_GE): 400nA
• Maximum Gate-Emitter Voltage (V_GE): ±20V
• Operating Temperature Range: -40°C to +125°C
• Mounting Style: Screw
• Dimensions (L × W × H): 106.4mm × 61.4mm × 30.5mm
• Weight: Approximately 420g
• Thermal Resistance (Junction-to-Case): 0.1 K/W
• RoHS Compliant: Yes