Product Description

The BSM75GB60DLC is a high-performance dual IGBT (Insulated Gate Bipolar Transistor) module from Infineon Technologies, designed for demanding industrial applications such as motor drives, renewable energy systems, and uninterruptible power supplies. It features a 600V collector-emitter voltage rating and a continuous collector current of 75A at 25°C, with a peak pulsed current capability of 150A. The module is optimized for high-frequency operation up to 100kHz, offering low saturation voltage (2.2V) and low gate-emitter leakage current (400nA). Its compact 34mm package ensures efficient thermal management and is suitable for chassis mounting. The BSM75GB60DLC is RoHS compliant, UL-certified, and capable of operating in temperatures ranging from -40°C to +125°C, making it a reliable choice for high-stress environments.​

Technical Specifications

• Type: Dual IGBT Module
• Manufacturer: Infineon Technologies
• Package: 34mm
• Configuration: Half-bridge
• Collector-Emitter Voltage (V_CEO): 600V
• Collector-Emitter Saturation Voltage (V_CESAT): 2.2V
• Continuous Collector Current (I_C) at 25°C: 75A
• Pulsed Collector Current (I_CP): 150A
• Gate-Emitter Leakage Current (I_GE): 400nA
• Power Dissipation (P_D): 355W
• Maximum Gate-Emitter Voltage (V_GE): ±20V
• Operating Temperature Range: -40°C to +125°C
• Mounting Style: Chassis Mount
• Dimensions (L × W × H): 94mm × 34mm × 30.5mm
• Weight: Approximately 180g
• RoHS Compliant: Yes
• UL Certification: UL1557 E83336