Product Description

The Infineon FF300R12KT4 is a high-performance dual IGBT (Insulated Gate Bipolar Transistor) module designed for demanding industrial applications. With a 1200 V collector-emitter voltage rating and a continuous collector current of 300 A at 25°C, it offers exceptional power handling capabilities. Utilizing Infineon's advanced TRENCHSTOP™ IGBT4 technology and optimized Emitter Controlled Diode (ECD), the module ensures low switching losses and high efficiency. Its robust design features a 62 mm C-series package with a 7-pin configuration, making it suitable for applications such as motor drives, uninterruptible power supplies (UPS), and other high-power industrial systems. The module also operates efficiently at junction temperatures up to 150°C, ensuring reliability in demanding environments.​

Technical Specifications

• Type: Dual IGBT Module
• Collector-Emitter Voltage (V_CE max): 1200 V
• Continuous Collector Current (I_C): 300 A at 25°C
• Pulsed Collector Current (I_CP): 600 A (1 ms pulse width)
• Power Dissipation (P_D): 1600 W
• Collector-Emitter Saturation Voltage (V_CE(sat)): 2.15 V at 300 A and 15 V gate drive
• Gate-Emitter Voltage (V_GE): ±20 V
• Input Capacitance (C_ies): 19 nF at 25 V
• Operating Junction Temperature (T_j): -40°C to +150°C
• Package Type: 62 mm C-series
• Number of Pins: 7
• Mounting Type: Chassis mount
• Thermal Interface Material: Optional
• UL/CSA Certification: UL1557 E83336
• RoHS Compliant: Yes​