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Infineon FF800R17KF6C_B2 Power Supply Module FF800R17KF6CB2
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Product Description
The Infineon FF800R17KF6C_B2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for demanding industrial applications such as motor drives, renewable energy systems, and uninterruptible power supplies (UPS). Housed in a robust IHM-A package, this module offers a 1700V collector-emitter voltage rating and a continuous collector current of 800A at 25°C, with a peak pulsed current capability of up to 1600A. It features low saturation voltage (VCE(sat)) and low gate-emitter leakage current, ensuring efficient switching and minimal power losses. The module is optimized for high-frequency operation, providing reliable performance in high-stress environments.
Technical Specifications
- Type: IGBT Module
- Manufacturer: Infineon Technologies
- Package: IHM-A
- Configuration: Dual
- Collector-Emitter Voltage (V_CEO): 1700V
- Collector-Emitter Saturation Voltage (V_CESAT): 2.6V
- Continuous Collector Current (I_C) at 25°C: 800A
- Pulsed Collector Current (I_CP): 1600A (1ms pulse)
- Power Dissipation (P_D): 6.25W
- Gate-Emitter Leakage Current (I_GE): 400nA
- Maximum Gate-Emitter Voltage (V_GE): ±20V
- Operating Temperature Range: -40°C to +125°C
- Mounting Style: Screw
- Number of Pins: 10
- Dimensions (L × W × H): 140mm × 130mm × 38mm
- Weight: Approximately 1.5kg
- RoHS Compliant: Yes
- UL Certification: UL1557 E83336
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