Product Description

The Infineon FZ1200R17KE3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for demanding industrial applications such as motor drives, renewable energy systems, and uninterruptible power supplies (UPS). Housed in the standardized IHM130 package, this module offers a 1700V collector-emitter voltage rating and a continuous collector current of 1200A at 25°C, with a peak pulsed current capability of up to 2400A. It features low saturation voltage (VCE(sat)) and low gate-emitter leakage current, ensuring efficient switching and minimal power losses. The module is optimized for high-frequency operation, providing reliable performance in high-stress environments.​

Technical Specifications

• Type: IGBT Module
• Manufacturer: Infineon Technologies
• Package: IHM130
• Configuration: Dual
• Collector-Emitter Voltage (V_CEO): 1700V
• Collector-Emitter Saturation Voltage (V_CESAT): 2.0V
• Continuous Collector Current (I_C) at 25°C: 1200A
• Pulsed Collector Current (I_CP): 2400A (1ms pulse)
• Power Dissipation (P_D): 6.25W
• Gate-Emitter Leakage Current (I_GE): 400nA
• Maximum Gate-Emitter Voltage (V_GE): ±20V
• Operating Temperature Range: -40°C to +125°C
• Mounting Style: SMD/SMT
• Dimensions (L × W × H): 140mm × 130mm × 38mm
• Weight: Approximately 1.5kg
• Thermal Resistance (Junction-to-Case): 0.051 K/W
• RoHS Compliant: Yes
• UL Certification: UL1557 E83336