Product Description

The FZ2400R12HE4-B9 is a high-power IGBT module from Infineon Technologies, designed for demanding industrial applications requiring robust performance and reliability. Housed in the standardized IHMB 190mm package, this module features a 1200 V collector-emitter voltage rating and a continuous collector current of 2400 A at 25°C. Utilizing Infineon's advanced Trench/Fieldstop IGBT4 technology, it offers low switching losses and high power density, making it ideal for applications such as motor drives, uninterruptible power supplies (UPS), and renewable energy systems. The module is equipped with an emitter-controlled diode (E4) and is available with or without pre-applied thermal interface material (TIM), providing flexibility for various system designs.

Technical Specifications

• Type: IGBT Module
• Technology: Trench/Fieldstop IGBT4
• Package: IHMB 190mm
• Configuration: Single switch
• Collector-Emitter Voltage (V_CEO): 1200 V
• Continuous Collector Current (I_C): 2400 A at 25°C
• Collector-Emitter Saturation Voltage (V_CEsat): 1.75 V (typical) at 25°C
• Gate-Emitter Voltage (V_GE): ±20 V
• Gate-Emitter Leakage Current (I_GE): 400 nA
• Power Dissipation (P_d): 13.5 kW
• Operating Temperature Range (T_vj op): -40°C to +150°C
• Thermal Resistance (R_th(j-c)): 0.98 K/kW
• Thermal Resistance (R_th(c-h)): 0.65 K/kW
• Gate Charge (Q_G): 18.5 µC
• Input Capacitance (C_ies): 150 nF at 25°C
• Reverse Transfer Capacitance (C_res): 8.3 nF at 25°C
• Turn-On Energy Loss (E_on): 460 mJ at 150°C
• Turn-Off Energy Loss (E_off): 455 mJ at 150°C
• Package Material: Copper base plate
• Compliance: UL recognized