Product Description

CM600HU24F DISCONTINUED BY MANUFACTURER MITSUBISHI IGBT MODULE HIGH POWER SWITCHING USE IC: 600A VCES: 1200V INSULATED TYPE 1-ELEMENTS IN A PACK The CM600HU24F is a high-performance IGBT (Insulated Gate Bipolar Transistor) module from Mitsubishi Electric, designed for demanding industrial applications requiring reliable and efficient power switching. This module is engineered to handle high voltage and current loads, making it suitable for use in motor drives, power inverters, and other high-power electronic systems. With its robust construction and advanced thermal management, the CM600HU24F ensures stable operation and longevity even under harsh conditions. It offers fast switching speeds and low conduction losses, contributing to improved overall system efficiency and performance.

Technical Specifications

• Model: CM600HU24F
• Type: IGBT Module
• Power Rating: 600A
• Voltage Rating: 1200V DC
• Switching Frequency: Up to 20 kHz
• Conduction Loss: Low
• Thermal Resistance (Junction to Case): 0.14°C/W
• Package Type: Half-bridge module
• Internal Configuration: 2 IGBTs and 2 diodes
• Gate Drive: Includes integrated gate drive circuits
• Operating Temperature Range: -40°C to +125°C
• Dimensions: 185mm x 155mm x 30mm (W x H x D)
• Weight: Approximately 2.5 kg
• Enclosure Rating: IP20