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Product Description
The OSA166S5NA is a high-power infrared emitter diode manufactured by OSRAM Opto Semiconductors. It features a peak wavelength of 940 nm, making it suitable for applications requiring reduced visible light emission. The emitter offers a radiant intensity of 680 mW/sr when driven at a forward current of 1 A with a pulse duration of 10 ms. Its compact surface-mount design (1.6 mm x 1.6 mm x 1.71 mm) and wide viewing angle of 35° make it ideal for space-constrained applications requiring efficient infrared illumination.
Technical Specifications
- Peak Wavelength: 940 nm
- Radiant Intensity (Ie): 680 mW/sr at IF = 1 A, tp = 10 ms
- 【AXEL GLOBAL】AS ONE
- +5
- Farnell
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- ch.farnell.com
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- Forward Current (IF): 1 A (average)
- Forward Voltage (VF): Max 3.3 V
- Farnell
- Rise Time: 9 ns
- 【AXEL GLOBAL】AS ONE
- +6
- Mouser Electronics
- +6
- GlobalSpec Datasheets
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- Fall Time (tf): 16 ns
- Viewing Angle (θ½): 35°
- GlobalSpec Datasheets
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- ch.farnell.com
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- Farnell
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- Operating Temperature Range: -40°C to +105°C
- ch.farnell.com
- +2
- ams-osram
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- Farnell
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- Package Dimensions: 1.6 mm (L) x 1.6 mm (W) x 1.71 mm (H)
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